EXPERIMENTAL INVESTIGATION OF LOW-FREQUENCY NOISE PROPERTIES OF ALGAAS/GAAS AND GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
SCIE
- Title
- EXPERIMENTAL INVESTIGATION OF LOW-FREQUENCY NOISE PROPERTIES OF ALGAAS/GAAS AND GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
- Authors
- SHIN, JH; LEE, JW; SEO, YS; KIM, YS; KIM, B
- Date Issued
- 1995-01
- Publisher
- IOP PUBLISHING LTD
- Abstract
- The intrinsic low frequency noise characteristics of AlGaAs/GaAs and GaInP/GaAs HBTs have been studied. HBTs with large emitter size of 120 x 120 mu m(2) have been fabricated on MOCVD-grown abrupt junction emitter materials without undoped spacer layer. The leakage current of GaInP/GaAs HBTs is a little lower than that of AlGaAs/GaAs HBTs. However, AlGaAs/GaAs HBTs have 10 similar to 25 dB lower noise level than GaInP/GaAs HBTs. For GaInP/GaAs HBTs, the base current noise power spectral densities are proportional to similar to exp(V-BE/V-T) at a low current level(Ic less than or equal to 1mA) and saturate at a high current level. This is due to the gain-creeping effect of HBT originating from the persistent band discontinuity. Thus, the dominant noise generation process occurs at the base side of hetero-interface, which is very noisy. But AlGaAs/GaAs HBT noise source is the recombination at the base region.
- Keywords
- TRANSPORT; HBTS; GAIN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21870
- ISSN
- 0951-3248
- Article Type
- Article
- Citation
- INSTITUTE OF PHYSICS CONFERENCE SERIES, no. 141, page. 625 - 628, 1995-01
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