Investigation of Hot-Carrier Reliability in Junctionless Polysilicon Thin-Film Transistors
SCIE
SCOPUS
- Title
- Investigation of Hot-Carrier Reliability in Junctionless Polysilicon Thin-Film Transistors
- Authors
- Lee, Hojoon; Lee, Junyoung; Oh, Hyeongwan; Kim, Jiwon; Lee, Jeong-Soo
- Date Issued
- 2017-05
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Abstract
- We investigate hot-carrier (HC) reliability and 1/f noise characteristics in junctionless thin-film transistors (J-TFTs). The in-situ n +-doped channel polysilicon was deposited using low-temperature chemical vapor deposition (LP-CVD). Under the HC stressing, the junctionless devices show less degradation of the electrical characteristics than those of conventional inversion-mode TFTs (IM-TFTs). In order to further analyze the reliability behaviors, the low-frequency noise spectral density (Sid ) characteristics of the J-TFTs were measured and compared with the IM-TFTs. Under the HC stressing, the J-TFTs showed two order of magnitude lower noise levels due to bulk conduction and lower lateral electric field near drain region compared to the IM-TFTs.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/41243
- DOI
- 10.1166/jnn.2017.14034
- ISSN
- 1533-4880
- Article Type
- Article
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 17, no. 5, page. 3375 - 3377, 2017-05
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