Relationship between the dipole moment of self-assembled monolayers incorporated in graphene transistors and device electrical stabilities
SCIE
SCOPUS
- Title
- Relationship between the dipole moment of self-assembled monolayers incorporated in graphene transistors and device electrical stabilities
- Authors
- KU, GWANG MO; LEE, EUNHO; KANG, BOSEOK; LEE, JUNG HUN; CHO, KIL WON; LEE, WI HYOUNG
- Date Issued
- 2017-07
- Publisher
- Royal Society of Chemistry
- Abstract
- Surface characteristics of the gate-dielectric layers in graphene field-effect transistors (FETs) critically affect
the electrical properties of the devices. In this report, the effects of self-assembled monolayers (SAMs) on
the electrical properties of graphene FETs were examined by using various SAM buffer layers with different
end groups and alkyl chain lengths. Especially, the dipole moment of the SAMs affects the doping properties
of graphene as well as field-effect mobility, hysteresis, and stability of graphene FETs. The type and
magnitude of doping are dependent on the functional groups in SAMs: Electron withdrawing fluorine
groups p-dope the graphene whereas electron donating amine groups n-dope the graphene. The
electrical stabilities such as hysteresis and gate-bias instability are mainly governed by the magnitude of
the dipole moment in SAMs. Hexamethyldisilazane treatment resulted in graphene FETs with the highest
electrical stabilities, because of the short one aliphatic alkyl chain with a negligible dipole moment. In
contrast, in graphene FETs with SAMs having a strong dipole moment, electrical stabilities deteriorated
by the charge trapping in SAMs.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/41068
- DOI
- 10.1039/c7ra03865h
- ISSN
- 2046-2069
- Article Type
- Article
- Citation
- RSC Advances, vol. 7, page. 27100 - 27104, 2017-07
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