INVESTIGATION OF OXYGEN INCORPORATION IN ALGAN/GAN HETEROSTRUCTURES
SCIE
SCOPUS
- Title
- INVESTIGATION OF OXYGEN INCORPORATION IN ALGAN/GAN HETEROSTRUCTURES
- Authors
- H. W. Jang; M.-K. Lee; H.-J. Shin; Jong-Lam Lee
- Date Issued
- 2003-03
- Publisher
- Wiley - V C H Verlag GmbbH & Co.
- Abstract
- The unintentional doping of oxygen atoms in undoped AlGaN layers was demonstrated by scanning photoemission microscopy (SPEM) using synchrotron radiation. In-situ annealing at 1000 degreesC and subsequent SPEM imaging showed that the oxygen concentration in AlGaN was much higher than in GaN. Space-resolved photoemission spectra of O 1s, Ga 3d and Al 2p core levels showed that the predominant oxygen incorporation in AlGaN resulted from the formation of Al-O bonds due to the high reactivity of Al with oxygen. The degenerated AlGaN layer produced by the oxygen donors caused the tunneling-assisted transport of electrons at the interface of the AlGaN with metal contacts and an increase in the sheet carrier concentration at the AlGaN/GaN heterointerface. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/40796
- DOI
- 10.1002/pssc.200303266
- ISSN
- 1862-6351
- Article Type
- Article
- Citation
- Physica Status Solidi (C) Current Topics in Solid State Physics, no. 7, page. 2456 - 2459, 2003-03
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