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Article
Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching DeviceSCIESCOPUS

IEEE ELECTRON DEVICE LETTERS, vol. 37, no. 7, page. 932 - 934, 2016-07

Article
Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)SCIESCOPUS

AIP Advances, vol. 6, no. 2, 2016-02

Article
Communication-Hourglass-Shaped Metal-Filament Switching Device with Multi-Layer (AlOX/TiO2) Oxide ElectrolytesSCIESCOPUS

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 5, no. 9, page. Q219 - Q221, 2016-07

Article
Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAMSCIESCOPUS

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 16, no. 5, page. 4758 - 4761, 2016-05

Article
Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrierSCIESCOPUS

AIP Advances, vol. 6, no. 5, 2016-05

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