Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device
SCIE
SCOPUS
- Title
- Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device
- Authors
- Song, J; Woo, J; Lee, S; Prakash, A; Yoo, J; Moon, K; Hwang, H
- Date Issued
- 2016-07
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- In this letter, we demonstrate a steep slope fieldeffect transistor (FET) using a threshold switching (TS) device. The Ag/TiO2-based TS device reported in our previous work was implemented in series with the drain region of a transistor. Since the TS device has an abrupt transition between the OFF- and ON-states and vice versa, the transistor has a 5-mV/decade subthreshold slope and a high ON/OFF-current ratio (I-ON/I-OFF) of >10(7) with a low drain voltage (0.3 V). Furthermore, the threshold voltage (V-th,V- FET) of the transistor can be tuned by controlling the thickness of the TS device.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/37688
- DOI
- 10.1109/LED.2016.2566661
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 37, no. 7, page. 932 - 934, 2016-07
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- There are no files associated with this item.
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