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Department of Materials Science & Engineering (신소재공학과)
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Article
Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
SCIE
SCOPUS
APPLIED PHYSICS LETTERS, vol. 94, no. 11, 2009-03-16
Dai, Q
;
Schubert, MF
;
Kim, MH
;
Kim, JK
;
Schubert, EF
;
Koleske, DD
;
Crawford, MH
;
Lee, SR
;
Fischer, AJ
;
Thaler, G
;
Banas, MA
1
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carrier density
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dislocation density
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gallium compounds
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III-V semiconductors
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indium compounds
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photoluminescence
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semiconductor growth
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semiconductor quantum wells
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wide band gap semiconductors
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2009
1
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scie
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scopus
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