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Article
Effect of surface treatment by (NH4)(2)S-x solution on the reduction of ohmic contact resistivity of p-type GaNSCIESCOPUS

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, vol. 17, no. 2, page. 497 - 499, 1999-03

Article
Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistorSCIESCOPUS

APPLIED PHYSICS LETTERS, vol. 74, no. 19, page. 2866 - 2868, 1999-05-10

Effect of surface treatment by (NH4)(2)S-x solution on the reduction of ohmic contact resistivity of p-type GaN

, 1999-03

Article
Evolution of surface morphology during Fe/Si(111) and Fe/Si(001) heteroepitaxySCIESCOPUS

PHYSICAL REVIEW B, vol. 59, no. 7, page. 4650 - 4653, 1999-02-15

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