Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi2Se3 thin films on hexagonal boron nitride
SCIE
SCOPUS
- Title
- Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi2Se3 thin films on hexagonal boron nitride
- Authors
- Park, Joon Young; Lee, Gil-Ho; Jo, Janghyun; Cheng, Austin K.; Yoon, Hosang; Watanabe, Kenji; Taniguchi, Takashi; Kim, Miyoung; Kim, Philip; Yi, Gyu-Chul
- Date Issued
- 2016-09
- Publisher
- IOP Publishing
- Abstract
- We report the molecular beam epitaxial growth and characterization of high quality topological insulator Bi2Se3 thin films on hexagonal boron nitride (h-BN). A two-step growth was developed, enhancing both the surface coverage and crystallinity of the films on h-BN. High-resolution transmission electron microscopy study showed an atomically abrupt and epitaxial interface formation between the h-BN substrate and Bi2Se3. We performed gate tuned magnetotransport characterizations of the device fabricated on the thin film and confirmed a high mobility surface state at the Bi2Se3/h-BN interface. The Berry phase obtained from Shubnikov-de Haas oscillations suggested this interfacial electronic state is a topologically protected Dirac state.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/39242
- DOI
- 10.1088/2053-1583/3/3/035029
- ISSN
- 2053-1583
- Article Type
- Article
- Citation
- 2D Materials, vol. 3, no. 3, page. 35029, 2016-09
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- There are no files associated with this item.
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