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Doping-induced bandgap tuning of α-Ga2O3 for ultraviolet lighting SCIE SCOPUS KCI

Title
Doping-induced bandgap tuning of α-Ga2O3 for ultraviolet lighting
Authors
Minseok ChoiSON, JUNWOO
Date Issued
2017-02
Publisher
ELSEVIER SCIENCE BV
Abstract
We propose the novel strategy for indirect-to-direct band gap transition of gallium oxide-based semiconductors for ultraviolet lighting device through first-principles calculations using a screened hybrid functional. Our calculations show that the tuning of electronic band gap of α-Ga2O3 is straightforward by adding dopants, which mimics alloy-like system. In order to put the band gap in the energy range of ultraviolet light, Group-III (In, Tl) at the Ga site and Group-V (N, P) or Group-VI (S, Se) at the O site are examined. We find that the most of doped Ga2O3 possess direct or nearly direct band gaps lying in the ultraviolet energy that is essential for optoelectronic devices.
URI
https://oasis.postech.ac.kr/handle/2014.oak/39193
DOI
10.1016/j.cap.2017.02.019
ISSN
1567-1739
Article Type
Article
Citation
CURRENT APPLIED PHYSICS, vol. 17, no. 5, page. 713 - 716, 2017-02
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손준우SON, JUNWOO
Dept of Materials Science & Enginrg
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