HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
SCIE
SCOPUS
- Title
- HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
- Authors
- SEUNYEOL, OH; Kim, T.; Kwak, M.; Song, J.; Woo, J.; Jeon, S.; Yoo, I.K.; HWANG, HYUNSANG
- Date Issued
- 2017-06
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- We propose a HfZrOx (HZO)-based ferroelectric synapse device with multi-levels states of remnant polarization that is equivalent to multi-levels conductance states. By optimizing the pulse condition, we obtained 32 levels of remnant polarization states for both potentiation and depression. Furthermore, a ferroelectricfield-effect transistor is simulated using the obtained multiple remnant polarization states. The simulation results show that linear and symmetric conductance states can be obtained by applying optimum potentiation and depression pulse conditions. A neural network was simulated using the proposed devices for pattern recognition. Using synapse parameters of the HZO-based ferroelectric device and a neural network simulator, we have confirmed that the pattern recognition accuracy of the MNIST data set is 84%. It shows that the HZO-based synapse device has potential for future high-density neuromorphic systems.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/39078
- DOI
- 10.1109/LED.2017.2698083
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 38, no. 6, page. 732 - 735, 2017-06
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.