Influence of tensile-strain-induced oxygen deficiency on metalinsulator transitions in NdNiO3−δ epitaxial thin films
- Influence of tensile-strain-induced oxygen deficiency on metalinsulator transitions in NdNiO3−δ epitaxial thin films
- Seungyang Heo; Chadol Oh; Junwoo Son; JANG, HYUN MYUNG
- Date Issued
- Nature Publishing Group
- We report direct evidence that oxygen vacancies affect the structural and electrical parameters in tensile-strained NdNiO3-δ epitaxial thin films by elaborately adjusting the amount of oxygen deficiency (δ) with changing growth temperature T D. The modulation in tensile strain and T D tended to increase oxygen deficiency (δ) in NdNiO3-δ thin films; this process relieves tensile strain of the thin film by oxygen vacancy incorporation. The oxygen deficiency is directly correlated with unit-cell volume and the metal-insulator transition temperature (T MI), i.e., resulting in the increase of both unit-cell volume and metal-insulator transition temperature as oxygen vacancies are incorporated. Our study suggests that the intrinsic defect sensitively influences both structural and electronic properties, and provides useful knobs for tailoring correlation-induced properties in complex oxides.
- Article Type
- scientific reports, vol. 7, 2017-07
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