Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications
SCIE
SCOPUS
- Title
- Self-Limited CBRAM With Threshold Selector for 1S1R Crossbar Array Applications
- Authors
- HWANG, HYUNSANG; Jeonghwan Song; Jiyong Woo; Seokjae Lim; Solomon Amsalu Chekol
- Date Issued
- 2017-09
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Abstract
- In this letter, we demonstrate a self-limited conductive-bridging random accessmemory (CBRAM) that removes the necessity for external current compliance in a one selector-one resistor (1S1R) architecture. The standard Ge2Sb2Te5 (GST) is used as a CBRAM switching layer. In addition, Te-rich GST is also considered. Their performance is then compared. Both samples exhibit self-limited on-current characteristics, and the on-currents of the standard GST and Te-rich GST are similar to 300 and similar to 20 mu A, respectively. The observed self-limited characteristics are caused by the Te in the GST layer because in the presence of Te, Cu tends to form a more stable CuTe phase that restrict Cu filament growth. Furthermore, to confirm the feasibility of crossbar array applications, the 1S1R device is evaluated using a Ag/TiO2-based threshold selector device reported in our previous work. Hence, we confirm leakage current reduction, a uniform resistance distribution, and stable retention characteristics in the 1S1R configuration with no external current compliance.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/39014
- DOI
- 10.1109/LED.2017.2757493
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 38, no. 11, page. 1532 - 1535, 2017-09
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- There are no files associated with this item.
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