Correlations among defect type, photoconductivity and photoreactivity of doped TiO2
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SCOPUS
KCI
- Title
- Correlations among defect type, photoconductivity and photoreactivity of doped TiO2
- Authors
- Kim, MH; Lee, SI; Song, TK; Park, H; Choi, W; Yoo, HI; Park, TG
- Date Issued
- 2001-11
- Publisher
- 한국화학공학회
- Abstract
- The electrical conductivity (sigma), photoconductivity and photocatalytic reactivity in doped crystalline TiO2 were measured as a function of the oxygen partial pressure (Po-2), temperature, doping type and UV irradiation. The Po, dependence of sigma suggests that the predominant atomic defects in pure TiO2 are oxygen vacancies (V-(o)double over dot) and interstitial titanium ions (Ti-(i) triple over dot), but the dominant defect is changed with Po-2 and temperature. The photoexcited electrons in reduced and/or n-type doped TiO2 enhance both the photoconductivity and the photocatalytic reactivity by the reduction process. Therefore, these behaviors are strongly dependent on the electron concentration.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/38685
- DOI
- 10.1007/BF02705611
- ISSN
- 0256-1115
- Article Type
- Article
- Citation
- Korean Journal of Chemical Engineering, vol. 18, no. 6, page. 873 - 878, 2001-11
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- There are no files associated with this item.
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