Reduction of ohmic contact resistivity on p-type GaN by surface treatment
SCIE
SCOPUS
- Title
- Reduction of ohmic contact resistivity on p-type GaN by surface treatment
- Authors
- Lee, JL; Kim, JK; Lee, JW; Park, YJ; Kim, T
- Date Issued
- 1999-11-16
- Publisher
- WILEY-V C H VERLAG GMBH
- Abstract
- The contact resistivity of transparent Pt contact on p-type GaN was drastically decreased by four orders of magnitude through the surface treatments in sequence, using aqua regia and (NH4)(2)S-x solution. The surface oxide on p-type GaN formed during epitaxial growth was removed in the boiling aqua regia, and the formation of native oxide on the oxide-free surface during air exposure prior to metal deposition was suppressed by the (NH4)(2)S-x treatment. This suggests that the reduction of contact resistivity is due to direct contact of Pt on the clean: surface of p-type GaN. via shift of the Fermi level to a energy level of accepters near the valence band, resulting in the reduction of barrier height for holes at the interface of Pt/p-type GaN.
- Keywords
- GAAS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/38126
- DOI
- 10.1002/(SICI)1521-396X(199911)176:1<763::AID-PSSA763>3.0.CO;2-6
- ISSN
- 0031-8965
- Article Type
- Article
- Citation
- PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, vol. 176, no. 1, page. 763 - 766, 1999-11-16
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- There are no files associated with this item.
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