Birch-Type Hydrogenation of Few-Layer Graphenes: Products and Mechanistic Implications
- Birch-Type Hydrogenation of Few-Layer Graphenes: Products and Mechanistic Implications
- Zhang, X; Huang, Y; Chen, SS; Kim, NY; Kim, W; Schilter, D; Biswal, M; Li, B; Lee, Z; Ryu, S; Bielawski, CW; Bacsa, WS; Ruoff, RS
- Date Issued
- AMERICAN CHEMICAL SOCIETY
- Few-layer graphenes, supported on Si with a superficial oxide layer, were subjected to a Birch-type reduction using Li and H2O as the electron and proton donors, respectively. The extent of hydrogenation for bilayer graphene was estimated at 1.6-24.1% according to Raman and X-ray photoelectron spectroscopic data. While single-layer graphene reacts uniformly, few-layer graphenes were hydrogenated inward from the edges and/or defects. The role of these reactive sites was reflected in the inertness of pristine few-layer graphenes whose edges were sealed. Hydrogenation of labeled bilayer (C-12/C-13) and trilayer (C-12/C-13/C-12) graphenes afforded products whose sheets were hydrogenated to the same extent, implicating passage of reagents between the graphene layers and equal decoration of each graphene face. The reduction of few-layer graphenes introduces strain, allows tuning of optical transmission and fluorescence, and opens synthetic routes to long sought-after films containing sp(3)-hybridized carbon.
- Article Type
- Journal of the American Chemical Society, vol. 138, no. 45, page. 14980 - 14986, 2016-11-16
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