Effect of Wavelength and Intensity of Light on a-InGaZnO TFTs under Negative Bias Illumination Stress
SCIE
SCOPUS
- Title
- Effect of Wavelength and Intensity of Light on a-InGaZnO TFTs under Negative Bias Illumination Stress
- Authors
- Kim, Woo-Sic; Lee, Yeol-Hyeong; Cho, Yong-Jung; Kim, Byeong-Koo; Park, Kyung Tae; Kim, Ohyun
- Date Issued
- 2017-01
- Publisher
- Electrochemical Society, Inc.
- Abstract
- We investigated degradation mechanism of a-IGZO TFTs under NBIS with different wavelengths. and intensities IL of light. Negative gate bias was applied for 4000 s while drain and source were grounded, and illuminations with lambda = 450, 530, or 700 nm were applied. Illumination with photon energy exceeding similar to 2.3 eV (530 nm) induced noticeable change in threshold voltage shift Delta V-th, which can be interpreted in terms of ionization of oxygen vacancies V-O. In addition, I-L of blue illumination (450 nm) was varied from 6 to 200 lux and saturation in Delta V-th was observed after exceeding a certain I-L. We suggest that the saturation occurs because V-O-ionization rate is saturated by outward relaxation of metal atoms in the a-IGZO film. (C) The Author(s) 2016. Published by ECS.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/37856
- DOI
- 10.1149/2.0021701JSS
- ISSN
- 2162-8769
- Article Type
- Article
- Citation
- ECS Journal of Solid State Science and Technology, vol. 6, no. 1, page. Q6 - Q9, 2017-01
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