Communication-Impact of Filament Instability in an Ag2S-Based Conductive-Bridge RAM for Cross-Point Selector Applications
SCIE
SCOPUS
- Title
- Communication-Impact of Filament Instability in an Ag2S-Based Conductive-Bridge RAM for Cross-Point Selector Applications
- Authors
- Woo, J; Hwang, H
- Date Issued
- 2016-01
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- We show that the motion of Ag atoms in an Ag2S-based conductive bridge RAM system can be utilized for threshold-type selector applications. We found that the instability of an Ag filament could be increased in low current operation, where only few limited Ag ions are allowed to form a filament, and this resulting small filament enables the transition of a non-volatile memory system to a volatile mode. Furthermore, the enhanced activity of Ag atoms at elevated temperatures promotes the self-dissolution process when the bias is removed. As a result, threshold switching behavior with suppressed hysteresis can be achieved. (c) 2016 The Electrochemical Society. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/37713
- DOI
- 10.1149/2.0221603jss
- ISSN
- 2162-8769
- Article Type
- Article
- Citation
- ECS Journal of Solid State Science and Technology, vol. 5, no. 3, page. Q98 - Q100, 2016-01
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