Introduction of WO3 Layer in a Cu-Based Al2O3 Conductive Bridge RAM System for Robust Cycling and Large Memory Window
SCIE
SCOPUS
- Title
- Introduction of WO3 Layer in a Cu-Based Al2O3 Conductive Bridge RAM System for Robust Cycling and Large Memory Window
- Authors
- Woo, J; Belmonte, A; Redolfi, A; Hwang, H; Jurczak, M; Goux, L
- Date Issued
- 2016-05
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- In this paper, we optimize a WO3\Al2O3 bilayer serving as the electrolyte of a conductive bridge RAM device using a Cu-based supply layer. By introducing a WO3 layer formed by thermal oxidation of a W plug, the hourglass shape of the conductive filament is desirably controlled, enabling excellent switching behavior. We demonstrate a clear improvement of the microstructure and density of the WO3 layer by increasing the oxidation time and temperature, resulting in a strong increase of the high-resistance-state breakdown voltage. The high quality WO3 microstructure allows thus the use of a larger reset pulse amplitude resulting both in larger memory window and failure-free write cycling.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/37704
- DOI
- 10.1109/JEDS.2016.2526632
- ISSN
- 2168-6734
- Article Type
- Article
- Citation
- IEEE Journal of the Electron Devices Society, vol. 4, no. 3, page. 163 - 166, 2016-05
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