Unified film patterning and annealing of an organic semiconductor with micro-grooved wet stamps
SCIE
SCOPUS
- Title
- Unified film patterning and annealing of an organic semiconductor with micro-grooved wet stamps
- Authors
- Kyunghun Kim; Mi Jang; Minjung Lee; Tae Kyu An; John E. Anthony; Se Hyun Kim; Hoichang Yang; Park, CE
- Date Issued
- 2016-08-07
- Publisher
- Royal Society of Chemistry
- Abstract
- A unified patterning and annealing approach was successfully demonstrated for 5,11-bis(triethylsilylethynyl)-anthradithiophene (TES-ADT) films spun-cast on polymer-treated SiO2 dielectrics. First, rubbery polydimethylsiloxane (mu-PDMS) stamps with microscale periodic grooves were swollen in 1,2-dichloroethane and then softly placed onto amorphous-like TES-ADT films. In this case, the film sides physically in contact with the wet stamps were quickly absorbed into the PDMS matrix while the non-contact area formed highly ordered phases by the solvent-annealing effect. The resulting patterns of TES-ADT contained discernable crystallites, where the grain sizes drastically decreased and their shapes transformed from spherulites to optically featureless ones with a decreasing line width from 100 to 2.5 mu m. Unlike ordinary systems containing spherulitic domains, the 2.5 mu m line-confined TES-ADT patterns contained layer-stacked crystallites but an optically invisible grain boundary, yielding an unexpectedly high field-effect mobility of 2.60 cm(2) V-1 s(-1) in organic field-effect transistors (OFETs), with narrow deviations less than 8% (averaged from 42 devices). The results suggest that the well pi-overlapped grains and their smooth connections are key factors to achieve high performance multi-array OFET applications.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/37694
- DOI
- 10.1039/C6TC01723A
- ISSN
- 2050-7526
- Article Type
- Article
- Citation
- Journal of Materials Chemistry C, vol. 4, no. 29, page. 6996 - 7003, 2016-08-07
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