Analog Synapse Device With 5-b MLC and Improved Data Retention for Neuromorphic System
SCIE
SCOPUS
- Title
- Analog Synapse Device With 5-b MLC and Improved Data Retention for Neuromorphic System
- Authors
- Moon, K; Cha, E; Park, J; Gi, S; Chu, M; Baek, K; Lee, B; Oh, SH; Hwang, H
- Date Issued
- 2016-08
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Abstract
- This letter presents an investigation of analog synapse characteristics of a PCMO-based interface switching device with varying electrode materials. In comparison with the filamentary switching device having only 1-b storage and variability issues, the interface switching devices exhibit excellent electrical properties, such as 5-b (32-level) multi-level cell characteristics, wafer-scale switching uniformity, and scalability of the switching energy with device area. To improve data retention of the interface switching device, we propose a Mo electrode to increase the oxidation barrier height (similar to 0.4 eV) that, in turn, significantly improves the retention time and pattern classification accuracy of neural networks.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/37685
- DOI
- 10.1109/LED.2016.2583545
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE Electron Device Letters, vol. 37, no. 8, page. 1067 - 1070, 2016-08
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- There are no files associated with this item.
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