Photo-patternable high-k ZrOx dielectrics prepared using zirconium acrylate for low-voltage-operating organic complementary inverters
SCIE
SCOPUS
- Title
- Photo-patternable high-k ZrOx dielectrics prepared using zirconium acrylate for low-voltage-operating organic complementary inverters
- Authors
- Yong Jin Jeong; Dong-Jin Yun; Sooji Nam; Eui Hyun Suh; Park, CE; Tae Kyu An; Jaeyoung Jang
- Date Issued
- 2016-06
- Publisher
- Elsevier
- Abstract
- Solution-processed dielectric materials with a high dielectric constant (k) have attracted considerable attention due to their potential applications in low-voltage-operating organic field-effect transistors (OFETs) for realizing large-area and low-power electronic devices. In terms of device commercialization, the patterning of each film component via a facile route is an important issue. In this study, we introduce a photo-patternable precursor, zirconium acrylate (ZrA), to fabricate photo-patterned high-k zirconium oxide (ZrOx) dielectric layers with UV light. Solution-processed ZrA films were effectively micro-patterned with UV exposure and developing, and transitioned to ZrOx through a sol-gel reaction during deep-UV annealing. The UV-assisted and similar to 10 nm-thick ZrOx dielectric films exhibited a high capacitance (917.13 nF/cm(2) at 1 KHz) and low leakage current density (10(-7) A/cm(2) at 1.94 MV/cm). Those films could be utilized as gate dielectric layers of OFETs after surface modification with ultrathin cyclic olefin copolymer layers. Finally, we successfully fabricated organic complementary inverters exhibiting hysteresis-free operation and high voltage gains of over 42 at low voltages of <= 3 V. (C) 2016 Elsevier B.V. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/37643
- DOI
- 10.1016/J.ORGEL.2016.03.005
- ISSN
- 1566-1199
- Article Type
- Article
- Citation
- Organic Electronics, vol. 33, page. 40 - 47, 2016-06
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