In0.5Ga0.5P/In0.22Ga0.78As Pseudomorphic High Electron Mobility Transistors with an Oxidized GaAs Gate for Improved Breakdown Voltage Characteristics
SCIE
SCOPUS
- Title
- In0.5Ga0.5P/In0.22Ga0.78As Pseudomorphic High Electron Mobility Transistors with an Oxidized GaAs Gate for Improved Breakdown Voltage Characteristics
- Authors
- Lee, JW; Kang, IH; Kang, SJ; Jo, SJ; In, SK; Song, HJ; Song, JI
- Date Issued
- 2003-02
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- DC and RF characteristics of In0.5Ga0.5P/In0.22Ga0.78As pseudomorphic high electron mobility transistors (pHEMTs) having a gate oxide layer were investigated. 1.5 x 50 mum(2) gate p-HEMTs having the gate oxide thickness of 0, 50, and 300 Angstrom were fabricated by using a liquid phase oxidation technique of GaAs. Substantial improvements in gate leakage current and on-state and off-state breakdown voltage characteristics of p-HEMTs having a gate, oxide layer were observed. The on-state breakdown voltage (similar to13.2 V) of the p-HEMTs having a 50 Angstrom gate oxide layer was approximate to 2.3 times lager than that of the p-HEMTs without a gate oxide layer. While the p-HEMTs having a gate oxide layer of 300 Angstrom showed much improved gate leakage current and on-state breakdown voltage characteristics, they suffered from degradation of output conductance due to the drain induced barrier lowering originating from the thick gate oxide layer. While optimization of p-HEMT epitaxial layer structure for metal-oxide-semiconductor gate operation is required for further improvements in device characteristics, the preliminary results indicate the potential of In0.5Ga0.5P/In0.22Ga0.78As/GaAs p-HEMT having a gate oxide layer for high power applications. (C) 2002 Elsevier Science Ltd. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/37393
- DOI
- 10.1016/S0038-1101(02)00198-3
- ISSN
- 0038-1101
- Article Type
- Article
- Citation
- SOLID-STATE ELECTRONICS, vol. 47, no. 2, page. 223 - 228, 2003-02
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