Thermoelectric transport in indium and aluminum-doped lead selenide
SCIE
SCOPUS
- Title
- Thermoelectric transport in indium and aluminum-doped lead selenide
- Authors
- Evola, EG; Nielsen, MD; Jaworski, CM; Jin, H; Heremans, JP
- Date Issued
- 2014-02-07
- Publisher
- AIP Publishing
- Abstract
- We present galvanomagnetic and thermomagnetic properties of bulk PbSe doped by substituting the donor elements In and Al for Pb. Although prominent resonant level effects are not seen, lightly doped samples display a high thermoelectric figure of merit (zT) in excess of 1.2 at 600 K, a temperature corresponding well to automotive waste heat recovery applications. This material's high zT is achieved without the use of nanostructuring or the relatively rare element Te. Phonon drag contributions to thermopower appear at temperatures below 30K in Al-doped samples. (C) 2014 AIP Publishing LLC.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/36763
- DOI
- 10.1063/1.4862812
- ISSN
- 0021-8979
- Article Type
- Article
- Citation
- Journal of Applied Physics, vol. 115, no. 5, page. 53704, 2014-02-07
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- There are no files associated with this item.
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