Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes
SCIE
SCOPUS
- Title
- Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes
- Authors
- Jeong, J; Choi, JE; Kim, YJ; Hwang, S; Kim, SK; Kim, JK; Jeong, HY; Hong, YJ
- Date Issued
- 2016-09-05
- Publisher
- American Institute of Physics
- Abstract
- Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p-n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW-and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunneling probability determined by wire/film junction geometry and size. Published by AIP Publishing.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/36729
- DOI
- 10.1063/1.4960586
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 109, no. 10, page. 101103 - 26, 2016-09-05
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- There are no files associated with this item.
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