Defect engineering route to boron nitride quantum dots and edge-hydroxylated functionalization for bio-imaging
SCIE
SCOPUS
- Title
- Defect engineering route to boron nitride quantum dots and edge-hydroxylated functionalization for bio-imaging
- Authors
- Jung, JH; Kotal, M; Jang, MH; Lee, J; Cho, YH; Kim, WJ; Oh, IK
- Date Issued
- 2016-07
- Publisher
- ROYAL SOC CHEMISTRY
- Abstract
- Hexagonal boron nitride (h-BN) has considerable potential for applications owing to its attractive features including good thermal conductivity, chemical stability, and unique optical properties. However, because h-BN is chemically inert and thermally stable, it is hard to synthesize boron nitride quantum dots (BNQDs) using chemical methods such as oxidation, hetero-atom doping or functionalization. Here, we report a defect engineering method to synthesize BNQDs from h-BN using physical energy sources including an impinging process of heated iron nanoparticles, microwave irradiation and sonication. Furthermore, edge-hydroxylated functionalization was employed to enhance the intracellular uptake of the BNQDs in cells for bioimaging. The edge-hydroxylated BNQDs (EH-BNQDs) showed blue colored photoluminescence with 325 nm laser excitation, good cytotoxicity performance with approximately 100% cell viability, and a good attachment to cell surfaces. The successful endocytosis of EH-BNQDs using a cancer cell line was also demonstrated.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/36710
- DOI
- 10.1039/c6ra12455k
- ISSN
- 2046-2069
- Article Type
- Article
- Citation
- RSC Advances, vol. 6, no. 77, page. 73939 - 73946, 2016-07
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