Open Access System for Information Sharing

Login Library

 

Article
Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Electrical Characteristics of Top-Gated Graphene Field Effect Transistors Fabricated on Stainless Steel (STS) Substrate SCIE SCOPUS

Title
Electrical Characteristics of Top-Gated Graphene Field Effect Transistors Fabricated on Stainless Steel (STS) Substrate
Authors
Jeong, SLee, HLee, JS
Date Issued
2016-05
Publisher
Journal of Nanoscience and Nanotechnology
Abstract
Top-gated Graphene transistors with Al2O3 gate-dielectric on the flexible stainless steel substrate have been demonstrated. Graphene was synthesized on copper foil using a chemical vapor deposition method and transferred onto the stainless steel substrate by wet transfer technique. The stainless steel substrate was polished by chemical mechanical polishing method and the spin-on-glass layer was coated on the surface to improve the surface roughness. The average surface roughness R-a was as low as 5.9 nm from the AFM measurement. The measured hole and electron mobilities from the current-voltage characteristics at room temperature were calculated as high as 310 and 45 cm(2)/Vs, respectively. In addition, the effect of surrounding temperature up to 355 K on the electrical variations was investigated. The mobility was inversely proportional to the temperature with negligible hysteresis where the temperature coefficient was calculated as low as -0.65 %/K.
URI
https://oasis.postech.ac.kr/handle/2014.oak/36650
DOI
10.1166/JNN.2016.12248
ISSN
1533-4880
Article Type
Article
Citation
Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, page. 5159 - 5163, 2016-05
Files in This Item:
There are no files associated with this item.

qr_code

  • mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher

이정수LEE, JEONG SOO
Dept of Electrical Enginrg
Read more

Views & Downloads

Browse