Electrical Characteristics of Top-Gated Graphene Field Effect Transistors Fabricated on Stainless Steel (STS) Substrate
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SCOPUS
- Title
- Electrical Characteristics of Top-Gated Graphene Field Effect Transistors Fabricated on Stainless Steel (STS) Substrate
- Authors
- Jeong, S; Lee, H; Lee, JS
- Date Issued
- 2016-05
- Publisher
- Journal of Nanoscience and Nanotechnology
- Abstract
- Top-gated Graphene transistors with Al2O3 gate-dielectric on the flexible stainless steel substrate have been demonstrated. Graphene was synthesized on copper foil using a chemical vapor deposition method and transferred onto the stainless steel substrate by wet transfer technique. The stainless steel substrate was polished by chemical mechanical polishing method and the spin-on-glass layer was coated on the surface to improve the surface roughness. The average surface roughness R-a was as low as 5.9 nm from the AFM measurement. The measured hole and electron mobilities from the current-voltage characteristics at room temperature were calculated as high as 310 and 45 cm(2)/Vs, respectively. In addition, the effect of surrounding temperature up to 355 K on the electrical variations was investigated. The mobility was inversely proportional to the temperature with negligible hysteresis where the temperature coefficient was calculated as low as -0.65 %/K.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/36650
- DOI
- 10.1166/JNN.2016.12248
- ISSN
- 1533-4880
- Article Type
- Article
- Citation
- Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, page. 5159 - 5163, 2016-05
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