Thickness-dependent electronic structure in ultrathin LaNiO3 films under tensile strain
SCIE
SCOPUS
- Title
- Thickness-dependent electronic structure in ultrathin LaNiO3 films under tensile strain
- Authors
- Hyang Keun Yoo; Seung Ill Hyun; Young Jun Chang; Luca Moreschini; Chang Hee Sohn; Hyeong-Do Kim; AARON BOSTWICK; ELI ROTENBERG; Shim, JH; Tae Won Noh
- Date Issued
- 2016-01-29
- Publisher
- AMER PHYSICAL SOC
- Abstract
- We investigated electronic-structure changes of tensile-strained ultrathin LaNiO3 (LNO) films from ten to one unit cells (UCs) using angle-resolved photoemission spectroscopy (ARPES). We found that there is a critical thickness t(c) between four and three UCs below which Ni e(g) electrons are confined in two-dimensional space. Furthermore, the Fermi surfaces (FSs) of LNO films below t(c) consist of two orthogonal pairs of one-dimensional (1D) straight parallel lines. Such a feature is not accidental as observed in constant-energy surfaces at all binding energies, which is not explained by first-principles calculations or the dynamical mean-field theory. The ARPES spectra also show anomalous spectral behaviors, such as no quasiparticle peak at the Fermi momentum but fast band dispersion comparable to the bare-band one, which is typical in a 1D system. As its possible origin, we propose 1D FS nesting, which also accounts for FS superstructures observed in ARPES.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/36615
- DOI
- 10.1103/PHYSREVB.93.035141
- ISSN
- 2469-9950
- Article Type
- Article
- Citation
- Physical Review b, vol. 93, no. 3, page. 35141-1 - 35141-7, 2016-01-29
- Files in This Item:
-
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.