A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis
SCIE
SCOPUS
- Title
- A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis
- Authors
- Park, B; Park, J; Son, JG; Kim, YJ; Yu, SU; Park, HJ; Chae, DH; Byun, J; Jeon, G; Huh, S; Lee, SK; Mishchenko, A; Hyun, S; Lee, TG; Han, SW; Ahn, JH; Lee, Z; Hwang, C; Novoselov, KS; Kim, KS; Hong, BH; Kim, JK
- Date Issued
- 2015-08
- Publisher
- AMER CHEMICAL SOC
- Abstract
- Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/36224
- DOI
- 10.1021/ACSNANO.5B03037
- ISSN
- 1936-0851
- Article Type
- Article
- Citation
- ACS NANO, vol. 9, no. 8, page. 8352 - 8360, 2015-08
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- There are no files associated with this item.
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