Growth of niobium on the three-dimensional topological insulator Bi2Te1.95Se1.05
SCIE
SCOPUS
- Title
- Growth of niobium on the three-dimensional topological insulator Bi2Te1.95Se1.05
- Authors
- Meixner, P; Lim, SJ; Park, J; Kim, JS; Fischer, SF; Seo, J; Kuk, Y
- Date Issued
- 2016-01-15
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- While applying a new cleaving method, we investigated the growth of Nb on the three-dimensional (3D) topological insulator (TI) Bi2Te1.95Se1.05 by scanning tunneling microscopy and spectroscopy. After the deposition of nearly a full monolayer of Nb by high-energy electron-beam evaporation, we observed a downshift of the bands and the Dirac point on the TI surface, which is the result of an n-type doping of the TI by transition metal adatoms. Extra peaks in the spectroscopy results upon Nb deposition might indicate a Rashba-split of the bulk bands. Nb grew in small 10 nm wide islands upon sub-monolayer growth and in a layer-by-layer growth mode up to an annealing temperature of 450 degrees C. (C) 2015 Elsevier B.V. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/36149
- DOI
- 10.1016/J.APSUSC.2015.11.163
- ISSN
- 0169-4332
- Article Type
- Article
- Citation
- APPLIED SURFACE SCIENCE, vol. 361, page. 185 - 189, 2016-01-15
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