A novel quasi-one-dimensional topological insulator in bismuth iodide beta-Bi4I4
SCIE
SCOPUS
- Title
- A novel quasi-one-dimensional topological insulator in bismuth iodide beta-Bi4I4
- Authors
- Autes, G; Isaeva, A; Moreschini, L; Johannsen, JC; Pisoni, A; Mori, R; Zhang, WT; Filatova, TG; Kuznetsov, AN; Forro, L; Van den Broek, W; Kim, Y; Kim, KS; Lanzara, A; Denlinger, JD; Rotenberg, E; Bostwick, A; Grioni, M; Yazyev, OV
- Date Issued
- 2016-02
- Publisher
- Nature publishing group
- Abstract
- Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs; refs 3-6), followed by closely related ternary compounds(7-16) and predictions of several weak TIs (refs 17-19). However, both the conceptual richness of Z(2) classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z(2) topological insulator is theoretically predicted and experimentally confirmed in the beta-phase of quasi-one-dimensional bismuth iodide Bi4I4. The electronic structure of beta-Bi4I4, characterized by Z(2) invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Our angle-resolved photoemission spectroscopy measurements performed on the (001) surface reveal a highly anisotropic band-crossing feature located at the (M) over bar point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/36121
- DOI
- 10.1038/NMAT4488
- ISSN
- 1476-1122
- Article Type
- Article
- Citation
- NATURE MATERIALS, vol. 15, no. 2, page. 154 - 158, 2016-02
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