Band modification of graphene by using slow Cs+ ions
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SCOPUS
- Title
- Band modification of graphene by using slow Cs+ ions
- Authors
- Sung, S; Lee, SH; Lee, P; Kim, J; Park, H; Ryu, M; Kim, N; Hwang, C; Jhi, SH; Chung, J
- Date Issued
- 2016-01
- Publisher
- RSC
- Abstract
- We report new wide band gap engineering for graphene using slow Cs+ ions, which allows both fine-tuning and on-off switching capability of the band gap in a range suitable for most applications without modifying or deteriorating the relativistic nature of the Dirac fermions. The doping of Cs+ ions opens the band gap up to E-g = 0.68 eV, which can be closed completely by adding neutral Cs atoms, as observed in angle-resolved photoemission spectroscopy. The operating mechanism of this band gap engineering is understood by a simple capacitor model, which is fully supported by the density-functional theory calculations.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35996
- DOI
- 10.1039/C5RA24482J
- ISSN
- 2046-2069
- Article Type
- Article
- Citation
- RSC Advances, vol. 6, no. 11, page. 9106 - 9111, 2016-01
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- There are no files associated with this item.
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