A scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip
SCIE
SCOPUS
- Title
- A scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip
- Authors
- Shin, K; Kang, DS; Lee, SH; Moon, W
- Date Issued
- 2015-12
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- We propose a method for measuring the capacitance of a thin layer using a Tip-on-Gate of Field-Effect Transistor (ToGoFET) probe. A ToGoFET probe with a metal-oxide-semiconductor field-effect transistor (MOSFET) with an ion-implant channel was embedded at the end of a cantilever and a Pt tip was fabricated using micro-machining. The ToGoFET probe was used to detect an alternating electric field at the dielectric surface. A dielectric buried metal sample was prepared; a sinusoidal input signal was applied to the buried metal lines; and the ToGoFET probe detected the electric field at the tip via the dielectric. The AC signal detected by the ToGoFET probe was demodulated by a simple AC-to-DC converter. Experimentally, it was shown that an electric field could be measured at the surface of the dielectric layer above a buried metal line. This promising result shows that it is possible to measure the surface local capacitance. (C) 2015 Elsevier B.V. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35672
- DOI
- 10.1016/J.ULTRAMIC.2015.07.007
- ISSN
- 0304-3991
- Article Type
- Article
- Citation
- ULTRAMICROSCOPY, vol. 159, page. 1 - 10, 2015-12
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- There are no files associated with this item.
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