Onset of the Efficiency Droop in GalnN Quantum Well Light-Emitting Diodes under Photoluminescence and Electroluminescence Excitation
SCIE
SCOPUS
- Title
- Onset of the Efficiency Droop in GalnN Quantum Well Light-Emitting Diodes under Photoluminescence and Electroluminescence Excitation
- Authors
- Lin, GB; Schubert, EF; Cho, J; Park, JH; Kim, JK
- Date Issued
- 2015-08
- Publisher
- AMER CHEMICAL SOC
- Abstract
- The efficiency of Ga0.87In0.13N/GaN single and multiple quantum well (QW) light-emitting diodes is investigated under photoluminescence (PL) and electro-luminescence (EL) excitation. By measuring the laser spot area (knife-edge method) and the absorbance of the GaInN QW (transmittance/reflectance measurements), the PL excitation density can be converted to an equivalent EL excitation density. The EL efficiency droop-onset occurs at an excitation density of 2.08 x 10(26) cm(-3) s(-1) (j = 10 A/cm(2)), whereas no PL efficiency droop is found for excitation densities as high as 3.11 X 10(27) cm(-3) s(-1) (j = 149 A/cm(2)). Considering Shockley Read Hall, radiative, and Auger rcombination and including carrier leakage shows that the EL efficiency droop is consistent with a reduction of injection efficiency.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35569
- DOI
- 10.1021/ACSPHOTONICS.5B00305
- ISSN
- 2330-4022
- Article Type
- Article
- Citation
- ACS PHOTONICS, vol. 2, no. 8, page. 1013 - 1018, 2015-08
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- There are no files associated with this item.
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