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Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior SCIE SCOPUS

Title
Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior
Authors
Hwang, SKim, DYPark, JHRyu, HYKim, JK
Date Issued
2015-10
Publisher
American Institute of Physics Inc.
Abstract
The effects of the hole injection modulated by using a three-terminal GaInN-based light emitter, light-emitting triode (LET), on carrier recombination behavior and efficiency droop are investigated. It was found that the lateral electric field created by applying voltage bias between the two anodes effectively reduces efficiency droop as well as dynamic conductance of LETs. Detailed analyses of LETs under various operation conditions by APSYS simulations reveal that the asymmetry in carrier transport between electrons and holes is alleviated by promoted injection of hot holes over the potential barrier, increasing the hole concentration as well as the radiative recombination rate in the multiple quantum well active region. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
URI
https://oasis.postech.ac.kr/handle/2014.oak/35562
DOI
10.1063/1.4932632
ISSN
2158-3226
Article Type
Article
Citation
AIP Advances, vol. 5, no. 10, 2015-10
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김종규KIM, JONG KYU
Dept of Materials Science & Enginrg
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