Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus
SCIE
SCOPUS
- Title
- Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus
- Authors
- Kim, J; Baik, SS; Ryu, SH; Sohn, Y; Park, S; Park, BG; Denlinger, J; Yi, Y; Choi, HJ; Kim, KS
- Date Issued
- 2015-08-14
- Publisher
- AMER ASSOC ADVANCEMENT SCIENCE
- Abstract
- Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable band gap in few-layer black phosphorus doped with potassium using an in situ surface doping technique. Through band structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulates the band gap, owing to the giant Stark effect, and tunes the material from a moderate-gap semiconductor to a band-inverted semimetal. At the critical field of this band inversion, the material becomes a Dirac semimetal with anisotropic dispersion, linear in armchair and quadratic in zigzag directions. The tunable band structure of black phosphorus may allow great flexibility in design and optimization of electronic and optoelectronic devices. © 2015, American Association for the Advancement of Science. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35510
- DOI
- 10.1126/SCIENCE.AAA6486
- ISSN
- 0036-8075
- Article Type
- Article
- Citation
- SCIENCE, vol. 349, no. 6249, page. 723 - 726, 2015-08-14
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.