Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
SCIE
SCOPUS
- Title
- Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
- Authors
- Kim, K; Kim, H; Kim, SH; Park, CE
- Date Issued
- 2015-01
- Publisher
- ROYAL SOC CHEMISTRY
- Abstract
- The electrical stabilities of low-voltage organic field-effect transistors (OFETs) were improved by applying graftable fluorinated polymer (gPFS) layers onto poly(4-vinyl phenol)-based cross-linked dielectrics (cPVP). As a result, a smooth and hydrophobic surface was formed, and the dielectric film displayed a low-leakage current density. The chemisorbed gPFS groups enabled the solution processing of an overlying 5,11-bis(triethylsilylethynyl)anthradithiophene semiconductor, which formed favorable terrace-like crystalline structures after solvent annealing. The top-contact OFETs showed superior operational stability compared to cPVP-based OFETs. Hysteresis was negligible, and the off-current of the transfer curve was one order of magnitude lower than that obtained from cPVP-based OFETs. The threshold voltage shift measured after a sustained gate bias stress for 1 h decreased significantly after introduction of the hydrophobic gPFS treatment; the energetic barrier to creating charge trapping sites increased, and the trap distribution narrowed, as supported by the stretched exponential function model.
- Keywords
- THIN-FILM TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; TRIETHYLSILYLETHYNYL-ANTHRADITHIOPHENE; PERFORMANCE; FABRICATION; DENSITY; GROWTH
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35434
- DOI
- 10.1039/C5CP01909E
- ISSN
- 1463-9076
- Article Type
- Article
- Citation
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS, vol. 17, no. 26, page. 16791 - 16797, 2015-01
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