A new transduction mechanism for hydrophones employing piezoelectricity and a field-effect transistor
SCIE
SCOPUS
- Title
- A new transduction mechanism for hydrophones employing piezoelectricity and a field-effect transistor
- Authors
- Min Sung; Kumjae Shin; Moon, W
- Date Issued
- 2015-09-01
- Publisher
- ELSEVIER
- Abstract
- In contrast to the induced charge or voltage in conventional piezoelectric hydrophones, changes in the bound surface charge density and the corresponding changes in the electric field from a piezoelectric body do not depend on the size of the piezoelectric material. In this paper, we describe a new transduction mechanism, the piezoelectric gate on a field-effect transistor (PiGoFET), for applications in hydrophones. We describe a theoretical model of the PiGoFET, which shows that high sensitivity can be achieved with a small hydrophone due to the size independence of the PiGoFET transduction mechanism. A PiGoFET hydrophone was designed, fabricated, and characterized. The measured sensitivity was -175.5 +/- 1 dB (Ref. V/mu Pa) at frequencies in the range 50-500 Hz. The measured frequency response was in agreement with the simulated data to within 2 dB. These results demonstrate potential applications in hydrophones, especially for wide-band and low-frequency applications, as well as in micro-hydrophones. (C) 2015 Elsevier B.V. All rights reserved.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35298
- DOI
- 10.1016/J.SNA.2015.07.008
- ISSN
- 0924-4247
- Article Type
- Article
- Citation
- SENSORS AND ACTUATORS A-PHYSICAL, vol. 233, page. 557 - 568, 2015-09-01
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