Thin Ion-gel Dielectric Layer to Enhance the Stability of Polymer Transistors
SCIE
SCOPUS
- Title
- Thin Ion-gel Dielectric Layer to Enhance the Stability of Polymer Transistors
- Authors
- Lee, SW; Shin, M; Park, JY; Kim, BS; Tu, D; Jeon, S; Jeong, U
- Date Issued
- 2015-05
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Abstract
- Poly(3-hexylthiophene)(P3HT) transistors with a thin ion-gel gate dielectric layer (100 nm thickness) was fabricated. The thin ion-gel dielectric layer retarded the capacitance drop at high frequencies and the diffusion of the ionic molecules in the polymer active layer that are severe drawbacks of the ion-gel dielectric transistors. Thereby, the thin ion-gel transistors showed hysteresis-free I-V characteristics, less frequency-dependence, and enhanced bias-stability. The average charge mobility was similar to 2 cm(2)/Vs and the on/off ratio was 10(4)similar to 10(5). The dependence of the capacitance and the kinetics of ion translation on the thickness of the ion-gel were discussed by both experiments and theoretical calculations.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35284
- DOI
- 10.1166/SAM.2015.1890
- ISSN
- 1947-2935
- Article Type
- Article
- Citation
- SCIENCE OF ADVANCED MATERIALS, vol. 7, no. 5, page. 874 - 880, 2015-05
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.