Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding
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- Title
- Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding
- Authors
- Lee, SW; Shin, M; Park, J; Jeong, U
- Date Issued
- 2013-03
- Publisher
- SPRINGER
- Abstract
- We investigated the stretchability of poly(3-hexylthiophene) (P3HT) thin film and its network structure. We found that stretchability of P3HT thin film is less than 3% strain and can be barely improved by the network structure. But, the ion-gel layer on the P3HT film could improve the electrical stability up to 6%. Based on the results, we fabricated high-performance polymer transistors (1 cm(2)/Vs and 10E4 on-off ratio) which are reasonably working at 10% tensile strain.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/35223
- DOI
- 10.1007/S13233-013-1119-1
- ISSN
- 1598-5032
- Article Type
- Article
- Citation
- MACROMOLECULAR RESEARCH, vol. 21, no. 3, page. 311 - 314, 2013-03
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