Low temperature (<=550 degrees C) fabrication of CMOS TFT's on rapid-thermal CVD polycrystalline silicon-germanium films
SCIE
SCOPUS
- Title
- Low temperature (<=550 degrees C) fabrication of CMOS TFT's on rapid-thermal CVD polycrystalline silicon-germanium films
- Authors
- Lee, SK; Choe, SM; Ahn, CG; Chung, WJ; Kwon, YK; Kang, BK; Kim, O
- Date Issued
- 1997-03
- Publisher
- JAPAN J APPLIED PHYSICS
- Abstract
- N-channel and p-channel metal-oxide-semiconductor (MOS) thin-film transistors (TFT's) have been fabricated on rapid thermal chemical vapor deposition (RTCVD) polycrystalline silicon-germanium (poly-Si0.88Ge0.12) films by a low temperature (less than or equal to 550 degrees C) process. These devices employ in-situ n(+) doped poly-Si0.65Ge0.35 films as gate electrodes to reduce the process time and temperature, dual-offset spacers to reduce the electric field in the drain junction region, and silicon capping layers to protect the poly-Si1-xGex films against oxygen. The I-d-V-g characteristics in n-channel TFT's, as well as in p-channel TFT's, exhibit good behavior after remote-PECVD hydrogenation. Further improvements on electrical properties in n-channel TFT's are limited by trap-inducing Ge behaviors in poly-Si1-xGex films.
- Keywords
- polycrystalline silicon germanium; TFT; low temperature; CMOS TFT; RTCVD; OPTICAL-PROPERTIES; TRANSISTORS; ALLOYS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/33814
- DOI
- 10.1143/JJAP.36.1389
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 36, no. 3B, page. 1389 - 1393, 1997-03
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