Homoepitaxial ZnO filim growth on vertically aligned ZnO nanorods
SCIE
SCOPUS
- Title
- Homoepitaxial ZnO filim growth on vertically aligned ZnO nanorods
- Authors
- Park, SH; Seo, SY; Kim, SH; Han, SW
- Date Issued
- 2007-05-15
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- We present a 2D ZnO film epitaxially grown on ID ZnO nanorods with catalyst-free metal-organic chemical vapor deposition. Vertically aligned ZnO nanorods were synthesized on Al2O3 substrates, and subsequently, a ZnO film was deposited on the pre-grown ZnO nanorods in situ. The dimensional ZnO growth was controlled by the growth chamber pressure. High-resolution X-ray diffraction and field-emission transmission electron microscope measurements demonstrated that the ZnO film was epitaxially grown on the pregrown ZnO nanorods, and that the ZnO film/nanorods structures had a well-ordered wurtzite structure. The ZnO film on ZnO nanorods/ Al2O3 had a uniform thickness with an average minimum thickness of 0.25 mu m and the root-mean-square roughness of 3 nm determined by Filed-emission scanning electron microscope and an atomic force microscopy measurements, respectively. These ZnO film/nanorods hybrid structures can be used as nanobuilding blocks for nanodevice applications. (C) 2007 Elsevier B.V. All rights reserved.
- Keywords
- crystal structure; homoepitaxial growth; MOCVD; thin film; nanorod; ZnO; CHEMICAL-VAPOR-DEPOSITION; LIGHT-EMITTING-DIODES; SENSING CHARACTERISTICS; EPITAXIAL-GROWTH; THIN-FILMS; ARRAYS; ELECTROLUMINESCENCE; ORIENTATION; NANOWIRES; GAN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/29428
- DOI
- 10.1016/j.jcrysgro.2006.12.079
- ISSN
- 0022-0248
- Article Type
- Article
- Citation
- JOURNAL OF CRYSTAL GROWTH, vol. 303, no. 2, page. 580 - 584, 2007-05-15
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