Chemical states of GeTe thin-film during structural phase-change by annealing in ultra-high vacuum
- Title
- Chemical states of GeTe thin-film during structural phase-change by annealing in ultra-high vacuum
- Authors
- Ko, C.; Lee, Y. M.; Shin, H. J.; Jung, M. -C.; Han, M.; Kim, K.; Park, J. C.; Song, S. A.; Jeong, H.; null
- Date Issued
- 2008-01
- Publisher
- Springer
- Abstract
- The chemical states of GeTe thin film are investigated using high-resolution X-ray photoelectron spectroscopy (HRXPS) with synchrotron radiation, during amorphous to crystalline structural phase transition. As the temperature increases from 250 to 400 degrees C, we observe the rock-salt crystalline structure and phase with X-ray diffraction (XRD) and transmission electron microscopy (TEM). Spin-orbit splitting of the Ge 3d core-level spectrum clearly appears after annealing at 400 degrees C for 5 min. However, the binding energy of the Ge 3d(5/2) core-level peak of 29.8 eV does not change in the amorphous to crystalline structural phase transition. In the case of the Te 4d core-level, change in binding energy and peak shapes is also negligible. We assume that the Te atom is fixed at a site between the amorphous and crystalline phases. Although the structural environment of the Ge atoms changes during the structural phase transition, the chemical environment does not.
- Keywords
- X-RAY PHOTOEMISSION; VALENCE BANDS; MECHANISM; MEMORY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/29194
- DOI
- 10.1140/EPJB/E2008-00400-X
- ISSN
- 1434-6028
- Article Type
- Article
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.