The fully-integrated CMOS RF power amplifier using the semilumped transformer
SCIE
SCOPUS
- Title
- The fully-integrated CMOS RF power amplifier using the semilumped transformer
- Authors
- Jin, BS; Han, K; Choi, J; Kang, D; Kim, B
- Date Issued
- 2008-11
- Publisher
- JOHN WILEY & SONS INC
- Abstract
- A semilumped output transformer for fully-integrated RF CMOS power amplifier is proposed in this paper. To demonstrate this transformer, a 2.5-GHz CMOS power amplifier is implemented with a 0.18-mu m RF CMOS process used for WiMAX application. The power amplifier can achieve 39% PAE (power added efficiency) at P 1dB (1 dB compression point) and output power of 30 dBm. The linearity can satisfy the spectrum mask of the WiMAX signal requirement basically. (c) 2008 Wiley Periodicals, Inc.
- Keywords
- CMOS; RF power amplifier; semilumped transformer; WiMAX; DISTRIBUTED ACTIVE-TRANSFORMER; DESIGN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28807
- DOI
- 10.1002/MOP.23811
- ISSN
- 0895-2477
- Article Type
- Article
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 50, no. 11, page. 2857 - 2860, 2008-11
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