A HIGHLY LINEAR AND EFFICIENT TWO-STAGE GaN HEMT ASYMMETRICAL DOHERTY AMPLIFIER FOR WCDMA APPLICATIONS
SCIE
SCOPUS
- Title
- A HIGHLY LINEAR AND EFFICIENT TWO-STAGE GaN HEMT ASYMMETRICAL DOHERTY AMPLIFIER FOR WCDMA APPLICATIONS
- Authors
- Lee, YS; Lee, MW; Jeong, YH
- Date Issued
- 2009-06
- Publisher
- JOHN WILEY & SONS INC
- Abstract
- In this article, we propose a highly linear and efficient two-stage GaN HEMT asymmetrical Doherty power amplifier (ADPA) for WCDMA applications. The first-stage driving DPA not only improves the linearity as the predistortion circuit but also reduces the power consumption in the driving stage. The second-stage main ADPA is optimized to achieve high efficiency at a 10-dB back-off power. (c) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1464-1467, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24387
- Keywords
- Dohertly amplifier; efficiency; GaN HEMT; linearity
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28771
- DOI
- 10.1002/MOP.24387
- ISSN
- 0895-2477
- Article Type
- Article
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 51, no. 6, page. 1464 - 1467, 2009-06
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