OPTIMUM DESIGN OF HIGHLY LINEAR AND EFFICIENT GaN HEMT DOHERTY AMPLIFIER CONSIDERING THE SOFT TURN-ON EFFECTS
SCIE
SCOPUS
- Title
- OPTIMUM DESIGN OF HIGHLY LINEAR AND EFFICIENT GaN HEMT DOHERTY AMPLIFIER CONSIDERING THE SOFT TURN-ON EFFECTS
- Authors
- Lee, YS; Lee, MW; Jeong, YH
- Date Issued
- 2009-04
- Publisher
- JOHN WILEY & SONS INC
- Abstract
- In this article, we propose the optimum design of a highly linear and efficient Doherty power amplifier (DPA) considering the soft turn-on effects of the GaN HEMT. To compensate for the soil turn-on characteristic and obtain air extended high-efficiency range. the DPA is designed with unequal drain biases. For experimental validations, the carrier and peaking cells or(, designed and implemented with the drain bias of 23 V and 33 V, respectively, using 25-W GaN HEMTs at 2.6 GHz and their tested using a continuous wave and a one-carrier WCDMA signal. The measured results show the superior performance for the proposed GaN HEMT DPA. (C) 2009 Wiley Periodicals. Inc. Microwave Opt Technol Lett 51: 956-959. 2009: Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24210
- Keywords
- Doherty amplifier; efficiency; GaN HEMT; linearity
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28770
- DOI
- 10.1002/MOP.24210
- ISSN
- 0895-2477
- Article Type
- Article
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 51, no. 4, page. 956 - 959, 2009-04
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