LINEARITY-OPTIMIZED CLASS-E DOHERTY AMPLIFIER BASED ON GaN HEMT
SCIE
SCOPUS
- Title
- LINEARITY-OPTIMIZED CLASS-E DOHERTY AMPLIFIER BASED ON GaN HEMT
- Authors
- Lee, YS; Lee, MW; Jeong, YH
- Date Issued
- 2009-03
- Publisher
- JOHN WILEY & SONS INC
- Abstract
- In this article, we report the linearity improvement of the GaN HEMT class-E Doherty power amplifier (CEDA). For the linearity improvement, not only the gate biases but also the matching circuits of the carrier and peaking cells are optimally controlled at a pout of 38 dBm, which is a 7-dB back-of power. For a two-tome signal with I-MHZ tone spacing, the IMD3 of - 58 dBc is achieved with a power-added efficiency (PAE) of 45.4%. For a one-carrier WCDMA signal, the PAE of 46.7% is obtained with an ACLR of 32.9 dBc. (c) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 763-766, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24154
- Keywords
- class-E power amplifier; Doherty amplifier; gallium nitride (GaN); linearity; WCDMA APPLICATIONS; HIGH-EFFICIENCY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28760
- DOI
- 10.1002/MOP.24154
- ISSN
- 0895-2477
- Article Type
- Article
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 51, no. 3, page. 763 - 766, 2009-03
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