A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress
SCIE
SCOPUS
- Title
- A Study of Strain Engineering Using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress
- Authors
- Lee, KT; Kang, CY; Park, MS; Lee, BH; Park, HK; Hwang, HS; Tseng, HH; Jammy, R; Jeong, YH
- Date Issued
- 2009-07
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- The effects of a stressor nitride layer on device performance and reliability are investigated. To decouple intrinsic mechanical stress and process-related effects, device characteristics under mechanical-bending stress and stressor layers were compared. The compressive-stressor device exhibits improved initial interface quality, although slightly degraded reliability characteristics, due to an increased hydrogen passivation of the dielectric/substrate interface. Thereby, the hydrogen passivation in the interface is found to be the primary cause of the difference in reliability characteristics.
- Keywords
- Contact etch stop layer (CESL); mechanical stress; metal gate/high-k; strained device
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28757
- DOI
- 10.1109/LED.2009.2021007
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 30, no. 7, page. 760 - 762, 2009-07
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