P-type Si-nanowire-based Field-effect Transistors for Electric Detection of a Biomarker: Matrix Metalloproteinase-9
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- Title
- P-type Si-nanowire-based Field-effect Transistors for Electric Detection of a Biomarker: Matrix Metalloproteinase-9
- Authors
- Lee, SH; Jeon, KJ; Lee, W; Choi, A; Jung, HI; Kim, CJ; Jo, MH
- Date Issued
- 2009-07
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- We studied the electric detection of a biomarker by using p-type Si-nanowire-based field-effect transistors (FETs) for biological applications. A combination of electron-beam lithography and a lift-off process was utilized to fabricate individual 50-nm-thick Si nanowire FETs. The gate-dependent I - V-SD curves revealed that the conductance of a Si-nanowire FET increased with increasing negative V-G. The conductance of the Si nanowire FET depended upon the existence of negatively charged streptavidin binding to a biotin with a peptide and Matrix metalloproteinase-9 (MMP-9), cutting the peptide. Our results suggest that Si-nanowire FETs can be used to detect MMP-9 activity.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/28481
- DOI
- 10.3938/jkps.55.232
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 55, no. 1, page. 232 - 235, 2009-07
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