DC Field | Value | Language |
---|---|---|
dc.contributor.author | LEE, S | - |
dc.contributor.author | SOHN, Y | - |
dc.contributor.author | KIM, C | - |
dc.contributor.author | LEE, DR | - |
dc.contributor.author | LEE, HH | - |
dc.contributor.author | null | - |
dc.date.accessioned | 2016-04-01T08:35:43Z | - |
dc.date.available | 2016-04-01T08:35:43Z | - |
dc.date.issued | 2009-05 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.other | 2009-OAK-0000018333 | - |
dc.identifier.uri | https://oasis.postech.ac.kr/handle/2014.oak/28327 | - |
dc.description.abstract | Reciprocal space mapping with a two-dimensional (2D) area detector in a grazing incidence geometry was applied to determine crystallographic orientations of GaN nanostructures epitaxially grown on a sapphire substrate. By using both unprojected and projected reciprocal space mapping with a proper coordinate transformation, the crystallographic orientations of GaN nanostructures with respect to that of a substrate were unambiguously determined. In particular, the legs of multipods in the wurtzite phase were found to preferentially nucleate on the sides of tetrahedral cores in the zinc blende phase. | - |
dc.description.statementofresponsibility | X | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | NANOCRYSTALS | - |
dc.subject | NANOPARTICLES | - |
dc.subject | GROWTH | - |
dc.title | A crystallographic investigation of GaN nanostructures by reciprocal space mapping in a grazing incidence geometry | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/0957-4484/20 | - |
dc.author.google | LEE, S | - |
dc.author.google | SOHN, Y | - |
dc.author.google | KIM, C | - |
dc.author.google | LEE, DR | - |
dc.author.google | LEE, HH | - |
dc.relation.volume | 20 | - |
dc.relation.issue | 21 | - |
dc.publisher.location | UK | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.relation.index | SCI급, SCOPUS 등재논문 | - |
dc.relation.sci | SCI | - |
dc.collections.name | Journal Papers | - |
dc.type.docType | Article | - |
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